25 South Green Drive, Athens, Ohio 45701

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The Physics & Astronomy Colloquium Series presents Thomas Ihn of ETH, Zurich discussing "Few-electron Graphene Quantum Dots" on April 1.



Abstract: It has become possible to fabricate high-quality quantum dots in bilayer graphene only recently (M. Eich et al.Phys. Rev. X 8, 031023 (2018)), despite early predictions that the material would offer advantageous properties for realizing quantum dot qubits. In addition to the electron spin, the valley degree-of-freedom and the topological material

properties lead to interesting physics in these structures. For example, the valley degree-of-freedom leads to a valley-blockade phenomenon in double quantum dots, in addition to the well-known spin-blockade physics. Furthermore, topology leads to a gate-tunable valley g-factor in individual quantum dots.

In this talk I will describe the corresponding experiments that also involve electron counting and gate pulsing, leading to the first measurements of the spin-relaxation times in these systems.

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